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Integrating perovskite oxides and layered materials towards future electronics

发布时间:2024-12-23浏览次数:

报告人 王骁 副教授 新加坡南洋理工大学 报告时间 2024年12月26日(周四)下午4:00

题目:Integrating perovskite oxides and layered materials towards future electronics

报告人:王骁 副教授 新加坡南洋理工大学

报告时间:20241226日(周四)下午4:00

报告地点:超硬实验综合楼5B520报告厅

摘要:When artificially integrating the naturally incompatible atomic structures, crystallographic orientations and physical functionalities, the interplays at the interfaces induce unexpected functionalities, which is beneficial to future electronics in the aspect of manipulation, functionalization and utilization. However, realizing unrestricted heterogeneous integration and their electronic applications is extremely challenging, because of the technical restrictions of fabrication and the unwanted reduction of interface quality. The challenges are particularly severe in the heterogeneous integration of oxides with either other emerging materials or existing Si technologies, because of the incompatible growth dynamics and large lattice mismatch. In this talk, I will discuss our recent exploration of functional electronic devices based on the heterogeneous integration of perovskite oxide films. First, I will provide a brief overview of the emergent functionalities in oxide heterostructures and approaches to heterogeneously integrating the perovskite oxides. Then, I will discuss on experimental results of two related electronic applications based on the heterogeneously integrated structures consisting of perovskite oxide membranes and layered two-dimensional materials, namely energy-efficient transistors using SrTiO3 and multifunctional devices using Sr-doped LaMnO3. A summary will be provided at the end.

报告人简介:王骁,新加坡南洋理工大学(Nanyang Technological University),副教授。长期从事低维材料和磁性材料和器件的研究,承担多项研究课题,研究成果多次发表在Science, Nature Electronics, Nature Communications, Advanced Materials 等期刊上。