(1)Chaoquan Hu*, Jian Liu, Jianbo Wang, Zhiqing Gu, Chao Li, Qian Li, Yuankai Li, Sam Zhang*, Chaobin Bi, Xiaofeng Fan* and Weitao Zheng*, New design for highly durable infrared-reflective coatings,Light: Sci. Appl.(2018) 7, e17175. (IF=14.098,物理1区)
(2) Z. Q. Gu,C. Q. Hu*, H. H. Huang, S. Zhang, X. F. Fan, X. Y. Wang, W. T. Zheng*, Identification and thermodynamic mechanism of the phase transition in hafnium nitride films,Acta Mater.90 (2015), 59–68.(IF=5.301,工程技术1区)
(3) Z. Q. Gu,C. Q. Hu*, X. F. Fan, L. Xu, M. Wen, Q. N. Meng, L. Zhao, X. L. Zheng, W. T. Zheng*, On the nature of point defect and its effect on electronic structure of rocksalt hafnium nitride films,Acta Mater. 81(2014), 315-325.(IF=5.301,工程技术1区)
(4) Chao Li,Chaoquan Hu*, Jianbo Wang, Xiao Yu, Zhongbo Yang, Jian Liu, Yuankai Li, Chaobin Bi, Xilin Zhou* and Weitao Zheng*, Understanding phase-change materials with unexpectedly low resistance drift for phase-change memories,J. Mater. Chem. C(2018) DOI: 10.1039/C8TC00222C (IF=5.256,工程技术1区)
(5) X. Yu, Y. Zhao, C. Li,C. Q. Hu*, L. Ma, S. H. Fan, Y. Zhao, N. Min, S. P. Tao, and Y. L. Wang, Improved multi-level data storage properties of germanium-antimony-tellurium films by nitrogen doping,Scr. Mater.141 (2017), 120–124.(IF=3.747,冶金工程1区)
(6)C. Q. Hu*, X. B. Zhang, Z. Q. Gu, H. H. Huang, S. Zhang, X. F. Fan, W. Zhang, Q. Wei, W. T. Zheng*, Negative effect of vacancies on cubic symmetry, hardness and conductivity in hafnium nitride films,Scr. Mater. 108 (2015), 141–146. (IF=3.747,冶金工程1区)
(7)C. Q. Hu*, Z. Q. Gu, J. B. Wang, K. Zhang, X. B. Zhang, M. M. Li, S. Zhang, X. F. Fan*, W. T. Zheng*, Nature of tunable optical reflectivity of rocksalt hafnium nitride films,J. Phys. Chem. C, 118 (2014), 20511-20520.(IF=4.536,化学2区)
(8) Z. Q. Gu, H. H. Huang, S Zhang, X. Y. Wang, J. Gao, L. Zhao, W. T. Zheng*, andC. Q. Hu*, Optical reflectivity and hardness improvement of hafnium nitride films via tantalum alloying,Appl. Phys. Lett. 109 (2016), 232-102.(IF=3.411,物理2区)
(9)C. Q. Hu, F. F. Meng, M. Wen, Z. Q. Gu, J. Y. Wang, X. F. Fan*, W. T. Zheng*, Relationship between dielectric coefficient and Urbach tail width of hydrogenated amorphous germanium carbon alloy films,Appl. Phys. Lett. 101(2012), 042109. (IF=3.411,物理2区)
(10) J. Gao, Y. Zhao, Z. Q. Gu, S. Zhang, M. Wen, L. L. Wu, W. T. Zheng*, andC. Q. Hu*, Improving electrical conductivity and wear resistance of hafnium nitride films via tantalum incorporation,Ceram. Int.43 (2017), 8517–8524. (IF=2.986,硅酸盐1区)