学习经历:

1979.09-1983.07:吉林师范大学(原四平师范学院)物理系,学士学位

1985.09-1988.07: 吉林大学物理学院, 硕士学位

1992.09-1995.07: 中国科学院金属研究所, 博士学位

工作经历:

1983.07-1985.09: 吉林师范大学物理系, 助教

1988.07-1992.09: 吉林师范大学物理系, 讲师

1995.07-1996.06: 吉林师范大学物理系, 副教授

1996.06-1998.12: 吉林大学物理系, 博士后, 副教授

1998.12- 吉林大学物理系, 教授.博士生导师

1999.10-2002.10: 新加坡国立大学, 访问学者

2005.03-2010.07: 中国科学院长春光学精密机械与物理研究所，研究员，“百人计划”入选者

Cu2ZnSnS4薄膜太阳能电池的制备技术和相关物理问题 过渡族金属硼化物和氮化物的超硬和电学性能

中国科学院“百人计划”入选者

吉林省有突出贡献中青年专业技术人才

2002年教育部提名国家科学技术奖自然科学一等奖（第三获奖人）

2015年吉林省自然科学奖一等奖（第三获奖人）

1. R.J. Liu, Y.F. Li,B. Yao, Z.H. Ding, Y.H. Jiang, L. Meng, R. Deng, L.G. Zhang, Z.Z. Zhang, H.F. Zhao, L. Liu,Shallow Acceptor State in Mg-Doped CuAlO2 and Its Effect on Electrical and Optical Properties: An Experimental and First-Principles Study, ACS Applied Materials & Interfaces, 9(14), 12608-12616(2017).

2. Z.Y. Xiao,B. Yao,Y.F. Li, Z.H. Ding, Z.M. Gao, H.F. Zhao, L.G. Zhang, Z.Z. Zhang, Y.R. Sui, G. Wang, Influencing Mechanism of the Selenization Temperature and Time on the Power Conversion Efficiency of Cu2ZnSn(S,Se)(4)-Based Solar Cells, ACS Applied Materials & Interfaces, 8(27), 17334-17342(2016).

3. G. Yang, Y. F. Li,B. Yao,Z.H. Ding, R. Deng, X. Fang and Z. P. Wei, Alternative Spectral Photoresponse in a p‑Cu2ZnSnS4/n‑GaN Heterojunction Photodiode by Modulating Applied Voltage，ACS Appl. Mater. & Interfaces 7, 16653−16658(2015).

4. B.Y. Zhang,B. Yao,Y.F. Li, A.M. Liu, Z.Z. Zhang, B.H. Li, G.Z. Xing, T. Wu, X.B．Qin, D.X. Zhao, C.X. Shan, and D.Z.Shen, Evidence of cation vacancy induced room temperature ferromagnetism in Li-N codoped ZnO thin films , Applied Physics Letters, 99(18), 182503(2011).

5. H. Zhu, C.X. Shan, B. Yao, B.H. Li, J.Y. Zhang, Z.Z. Zhang, D.X. Zhao, D.Z. Shen, X. W. Fan,Y.M. Lu, and Z.K. Tang, Ultralow-Threshold Laser Realized in Zinc Oxide , Advanced Materials 21:1613（2010）

6. H.L. Pan,B. Yao,T. Yang, Y. Xu, B.Y. Zhang, W.W. Liu, and D.Z. Shen, Electrical properties and stability of p-type ZnO film enhanced by alloying with S and heavy doping of Cu, Applied Physics Letters，97，142101 (2010).

7. B. Y. Zhang，B. Yao, Y. F. Li, Z. Z. Zhang, B. H. Li, C. X. Shan, D. X. Zhao, and D. Z. Shen，Investigation on the formation mechanism ofp-type Li–N dual-doped ZnO，Applied Physics Letters, (2010),97，222101.

8. R.Deng,B.Yao, Y.F.Li, Y.M.Zhao, B.H.Li, C.X.Shan, Z.Z.Zhang, D.X.Zhao, J.Y.Zhang, D.Z.Shen, and X.W.Fan, X-ray photoelectron spectroscopy measurement of n-ZnO/p-NiO heterostructure valence-band offset, Applied Physics Letters，94，022108(2009）.

9. Y. F. Li,B. Yao, Y. M. Lu, Z. P. Wei, Y. Q. Gai, C. J. Zheng, Z. Z. Zhang, B. H.Li, D. Z. Shen, X. W. Fan, Z. K. Tang, Realization of p-type conduction in undoped MgZnO thin films by controlling Mg content, Appl. Phys. Lett. 91, 021915 (2007).

10. C. X. Cong,B. Yao,G. Z. Xing, Y. P. Xie, and L. X.Guan,B. H. Li, X. H. Wang, Z. P. Wei, Z. Z. Zhang, Y. M. Lv, D. Z. Shen, and X. W. Fan, Control of structure, conduction behavior, and band gap of Zn_1−xMg_xO films by nitrogen partial pressure ratio of sputtering gases, Appl. Phys. Lett. 89, 262108(2006).